2DB1184Q document number: ds31504 rev. 5 - 2 1 of 6 www.diodes.com may 2014 ? diodes incorporated 2DB1184Q 50v pnp medium power transistor in to252 features ? bv ceo > -50v ? i c = -3a high continuous collector current ? i cm = -4.5a peak pulse current ? epitaxial planar die construction ? low collector-emitter saturation voltage ? ideal for medium power switching or amplification applications ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: to252 (dpak) ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte ti n plated leads, solderable per mil- std-202, method 208 ? weight: 0.34 grams (approximate) ordering information (note 4) product compliance marking reel size (inches) tape width (mm) quantity per reel 2DB1184Q-13 aec-q101 2DB1184Q 13 16 2,500 notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. marking information 2DB1184Q = product type marking code = manufacturers? code marking yyww = date code marking yy = last digit of year, (ex: 14 = 2014) ww = week code 01-52 yyww 2DB1184Q top view device schematic pin out configuration top view to252 (dpak) c e b e3 c e b
2DB1184Q document number: ds31504 rev. 5 - 2 2 of 6 www.diodes.com may 2014 ? diodes incorporated 2DB1184Q absolute maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v continuous collector current i c -3 a peak pulse collector current i cm -4.5 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation (note 5) p d 1.2 w power dissipation @t l = +25c (note 6) p d 15 w thermal resistance, junction to lead (note 5) r ja 104 c/w thermal resistance, junction to ambient (note 6) r jl 8.3 c/w operating and storage temperature range t j , t stg -55 to +150 c esd ratings (note 7) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 4000 v 3a electrostatic discharge - machine model esd mm 400 v c note: 5. for a device mounted with the exposed collector pad on minimum recommended pad (mrp) layout 1oz copper that is on a si ngle-sided 1.6mm fr4 pcb; device is measured under still air conditions whilst operating in a steady-state. 6. thermal resistance from junction to solder-point (on the exposed collector pad). 7. refer to jedec specification jesd22-a114 and jesd22-a115. thermal characteristics 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000 t , pulse duration time (s) 1 figure 1 transient thermal response 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 110c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9
2DB1184Q document number: ds31504 rev. 5 - 2 3 of 6 www.diodes.com may 2014 ? diodes incorporated 2DB1184Q electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) collector-base breakdown voltage bv cbo -60 ? ? v i c = -50a, i e = 0 collector-emitter breakdown voltage bv ceo -50 ? ? v i c = -1ma, i b = 0 emitter-base breakdown voltage bv ebo -5 ? ? v i e = -50a, i c = 0 collector cutoff current i cbo ? ? -1 a v cb = -40v, i e = 0 emitter cutoff current i ebo ? ? -1 a v eb = - 4v, i c = 0 on characteristics (note 8) collector-emitter saturation voltage v ce(sat) ? ? -1 v i c = -2a, i b = -0.2a base-emitter saturation voltage v be(sat) ? ? -1.2 v i c = -1.5a, i b = -0.15a dc current gain h fe 120 ? 270 ? v ce = -3v, i c = -0.5a small signal characteristics current gain-bandwidth product f t ? 110 ? mhz v ce = -5v, i c = -0.1a, f = 30mhz output capacitance c obo ? 26 ? pf v cb = -10v, f = 1mhz turn-on time t on ? 109 ? ns v cc = 30v i cc = 150ma i b1 = - i b2 = 15ma delay time t d ? 60 ? ns rise time t r ? 49 ? ns turn-off time t off ? 280 ? ns storage time t s ? 246 ? ns fall time t f ? 34 ? ns note: 8. measured under pul sed conditions. pulse width 300s. duty cycle 2%. 0 200 400 600 800 1,000 0.1 1 10 figure 2 typical collector current vs. collector-emitter voltage -v , collector-emitter voltage (v) ce -i , c o lle c t o r c u r r en t (ma) c i = -1ma b i = -2ma b i = -3ma b i = -4ma b i = -5ma b 0 50 100 150 200 250 300 350 400 0.001 0.01 0.1 1 10 -i , collector current (a) c figure 3 typical dc current gain vs. collector current h, d c c u r r en t g ain fe t = -55c a t = 25c a t = 85c a t = 150c a t = 125c a v = -3v ce
2DB1184Q document number: ds31504 rev. 5 - 2 4 of 6 www.diodes.com may 2014 ? diodes incorporated 2DB1184Q 0 0.1 0.2 0.3 0.4 0.001 0.01 0.1 1 10 -i , collector current (a) c figure 4 typical collector-emitter saturation voltage vs. collector current -v , c o lle c t o r -emi t t e r saturation voltage (v) ce(sat) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a i/i = 10 cb 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 -i , collector current (a) figure 5 typical base-emitter turn-on voltage vs. collector current c -v , base-emi t t e r t u r n - o n v o l t a g e (v) be(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -3v ce 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 figure 6 typical base-emitter saturation voltage vs. collector current -i , collector current (a) c -v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) t = -55c a t = 25c a t = 150c a t = 125c a t = 85c a i/i = 10 cb 10 100 1,000 0.1 1 10 100 v , reverse voltage (v) r figure 7 typical capacitance characteristics c a p a c i t a n c e (pf) c ibo c obo f = 1mhz 0 20 40 60 80 100 120 140 0102030405060708090100 i , collector current (ma) c figure 8 typical gain-bandwidth product vs. collector current f, g ai n -ba n d wi d t h p r o d u c t ( m h z) t v = -5v ce f = 30mhz 0.01 0.1 1 10 0.1 1 10 100 v , collector-emitter voltage (v) ce figure 9 safe operating area (note 3) i, c o lle c t o r c u r r e n t (a) c t = 25c single non-repetitive pulse a dc (ma) pw = 100ms (ma) pw = 10ms (ma) pw = 1ms (ma) pw = 100s (ma)
2DB1184Q document number: ds31504 rev. 5 - 2 5 of 6 www.diodes.com may 2014 ? diodes incorporated 2DB1184Q package outline dimensions please see ap02002 at http://www.diodes.com/dat asheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. to252 (dpak) dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 - - e - - 2.286 e 6.45 6.70 6.58 e1 4.32 - - h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 - all dimensions in mm dimensions value (in mm) c 4.572 x 1.060 x1 5.632 y 2.600 y1 5.700 y2 10.700 b 3 e l 3 d l 4 b 2 2 x b 3 x e c 2 a 7 1 h s e a t i n g p l a n e a 1 g a u g e p l a n e a 0 . 5 0 8 l 2 . 7 4 r e f d 1 a 2 e 1 x 1 x y 2 y 1 y c
2DB1184Q document number: ds31504 rev. 5 - 2 6 of 6 www.diodes.com may 2014 ? diodes incorporated 2DB1184Q important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when prope rly used in accordance with instructions for use provided in the labeling can be reasonably expected to re sult in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2014, diodes incorporated www.diodes.com
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